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| 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 20 80 20 120 150 -55 to +150 Unit V V A A A W C C 2 2SK1169, 2SK1170 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1169 V(BR)DSS 2SK1170 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 -- -- -- -- -- -- -- -- -- -- 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 3.0 0.25 0.27 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/s I D = 10 A, VGS = 10 V, RL = 3 I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1169 I DSS 2SK1170 Gate to source cutoff voltage Static Drain to source 2SK1169 RDS(on) on state resistance 2SK1170 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1169, 2SK1170 Power vs. Temperature Derating 100 150 Channel Dissipation Pch (W) 30 Drain Current ID (A) 10 3 1.0 Operation in this area is limited by RDS (on) 0.3 0 50 100 Case Temperature TC (C) 150 0.1 1 Ta = 25C D C PW Maximum Safe Operation Area 10 1 = 10 m s C 10 0 s s 100 m (1 O s pe ra tio n (T Sh 50 = ot ) 25 C ) 2SK1170 2SK1169 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 20 10 V 7V 6V 16 Pulse Test Drain Current ID (A) Typical Transfer Characteristics VDS = 20 V Pulse Test 40 Drain Current ID (A) 30 12 20 5V 8 4 75C -25C TC = 25C 10 VGS = 4 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 4 2SK1169, 2SK1170 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 10 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 5 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 8 2 1.0 0.5 6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 2 50 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 1.0 VGS = 10 V Pulse Test 50 Forward Transfer Admittance vs. Drain Current 0.8 20 10 5 2 1.0 0.5 0.2 VDS = 20 V Pulse Test -25C TC = 25C 75C 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.5 1.0 5 2 Drain Current ID (A) 10 20 5 2SK1169, 2SK1170 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 10,000 Ciss Capacitance C (pF) 1,000 Coss VGS = 0 f = 1 MHz 2,000 1,000 500 200 100 50 0.5 100 Crss 10 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VDS 12 VGS 8 V DD = 400 V 250 V 100 V ID = 20 A 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics Switching Time t (ns) 400 16 200 100 50 tf tr td (off) 200 td (on) 20 10 5 0.5 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * * 100 4 0 40 80 120 160 Gate Charge Qg (nc) 0 200 1.0 2 5 10 20 Drain Current ID (A) 50 6 2SK1169, 2SK1170 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5 V, 10 V VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 4 Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25C 0.1 0.05 0.02 0.01 Pulse ot 1Sh 0.03 ch-c (t) = S (t) * ch-c ch-c = 1.04C/W,TC = 25C PDM D = PW T PW T 100 1m 10 m Pulse Width PW (s) 100 m 1 10 0.01 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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